MBE-based SiGe/Si heterojunction multilayer structures

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 744-748

  Li, Kaicheng ^a   Zhang, Jing ^a   Liu, Daoguang ^a   Yi, Qiang ^a   Guo, Lin ^a   Xu, Shiliu ^a   Ni, Wei Xin ^b  

^a SISC   (China)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

A1. Doping; A1. X ray diffraction; A2. Single crystal growth; A3. Molecular beam epitaxy; B1. Germanium silicon alloys; B2. Semiconducting silicon; B3. Bipolar transistors; B3. Heterojunction semiconductor devices

Indexed keywords

COMPUTER SIMULATION; ELECTRIC RESISTANCE; HETEROJUNCTION BIPOLAR TRANSISTORS; MOLECULAR BEAM EPITAXY; MULTILAYERS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; X RAY DIFFRACTION ANALYSIS;

MULTILAYER HETEROSTRUCTURES;

HETEROJUNCTIONS;

EID: 0035399119     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00819-3     Document Type: Conference Paper

References (8)

1. Properties of silicon germanium and SiGe:Carbon