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Volumn 226, Issue 1, 2001, Pages 47-51
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Czochralski growth of heavily impurity doped crystals of GeSi alloys
a
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Author keywords
A2. Czochralski method; A2. Single crystal growth; B1. Alloys; B2. Semiconducting silicon compounds
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Indexed keywords
COMPOSITION EFFECTS;
CRYSTAL GROWTH FROM MELT;
DISLOCATIONS (CRYSTALS);
IMPURITIES;
INTERFACES (MATERIALS);
SINGLE CRYSTALS;
HEAVILY IMPURITY-DOPED CRYSTALS;
SEMICONDUCTING GERMANIUM COMPOUNDS;
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EID: 0035368692
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(01)01281-7 Document Type: Article |
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Times cited : (29)
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References (15)
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