The formation of dislocations in the interface of GeSi/low-temperature Si buffer grown on Si (0 0 1)

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 740-743

  Peng, C S ^a   Li, Y K ^a   Huang, Q ^a   Zhou, J M ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

A1. Defects; A1. X ray diffraction; A3. Molecular beam epitaxy; B1. Germanium silicon alloys; B2. Semiconducting germanium; B2. Semiconducting silicon

Indexed keywords

AGGLOMERATION; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); HIGH RESOLUTION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

X RAY ROCKING-CURVE ANALYSIS;

SEMICONDUCTING FILMS;

EID: 0035399229     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00818-1     Document Type: Conference Paper

References (13)