642-nm AlGaInP laser diodes with a triple tensile strain barrier cladding layer

IEEE Photonics Technology Letters

Volumn 10, Issue 5, 1998, Pages 651-653

  Chang, S J ^a   Chang, C S ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

AlGaInP; Laser diodes (LD); Tensile strain barrier cladding (TSBC)

Indexed keywords

CARRIER CONCENTRATION; CLADDING (COATING); SEMICONDUCTING ALUMINUM COMPOUNDS;

OPTICAL CONFINEMENT; TENSILE STRAIN BARRIER CLADDING (TSBC) LAYERS; THRESHOLD CURRENTS;

SEMICONDUCTOR LASERS;

EID: 0032074631     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.669229     Document Type: Article

References (12)

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