High-brightness AlGaInP 573-nm light-emitting diode with a chirped multiquantum barrier

IEEE Journal of Quantum Electronics

Volumn 34, Issue 1, 1998, Pages 77-83

  Chang, C S ^b   Su, Y K ^{a,b,c,d,e,f,g,h,i}   Chang, S J ^b,c,j,k,l   Chang, P T ^c   Wu, Y R ^c   Huang, K H ^c   Chen, T P ^c  

^a IEEE

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c United Epitaxy Company Ltd   (Taiwan)

^d National Cheng Kung University ^*

^e UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

^f LUCENT TECHNOLOGIES   (United States)

^g UNIVERSITY OF STUTTGART   (Germany)

^h BINGHAMTON UNIVERSITY   (United States)

ⁱ SPIE   (United States)

^j STONY BROOK UNIVERSITY   (United States)

^k UNIVERSITY OF CALIFORNIA   (United States)

^l NTT Basic Research Laboratories   (Japan)

more..

Author keywords

AlGaInP; Chirped multi quantum barrier; Light emitting diode; Metal organic chemical vapor deposition; Multiquantum barrier

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; ELECTROLUMINESCENCE; MATRIX ALGEBRA; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR SUPERLATTICES;

CHIRPED MULTIQUANTUM BARRIER STRUCTURE; UNIFORM MULTIQUANTUM BARRIER STRUCTURE;

LIGHT EMITTING DIODES;

EID: 0031647336     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.655010     Document Type: Article

References (7)

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