Wafer warpage, crystal bending and interface properties of 4H-SiC epi-wafers

Diamond and Related Materials

Volumn 6, Issue 10, 1997, Pages 1369-1373

  Ellison, A ^a   Radamson, H ^a   Tuominen, M ^a,b   Milita, S ^c   Hallin, C ^a   Henry, A ^a,d   Kordina, O ^b,d   Tuomi, T ^e   Yakimova, R ^a,b   Madar, R ^f   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b Okmetic Oyj   (Finland)

^c EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^d ABB CORPORATE RESEARCH   (Sweden)

^e AALTO UNIVERSITY   (Finland)

^f CNRS   (France)

Author keywords

Bending; Interface; Topography; X ray diffraction

Indexed keywords

EID: 0000522364     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(97)00086-1     Document Type: Article

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