Effects of strain on island scaling studied by Monte Carlo simulations

Surface Science

Volumn 364, Issue 2, 1996, Pages 164-177

  Nosho, B Z ^a   Bressler Hill, V ^a,b   Varma, S ^a,c   Weinberg, W H ^a  

^a University of California   (United States)

^b BioSource International Inc   (United States)

^c INSTITUTE OF PHYSICS   (India)

Author keywords

Computer simulations; Models of surface kinetics; Surface structure, morphology, roughness, and topography

Indexed keywords

ANISOTROPY; COMPUTER SIMULATION; CRYSTAL LATTICES; MATHEMATICAL MODELS; MONTE CARLO METHODS; MORPHOLOGY; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN; SURFACE ROUGHNESS; SURFACE STRUCTURE;

CARRIER CONFINEMENT; ISLAND SCALING; LATTICE MISMATCH; SURFACE TOPOGRAPHY;

EPITAXIAL GROWTH;

EID: 0030215558     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00627-9     Document Type: Article

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