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Volumn 36, Issue 3 A, 1997, Pages

Influences of superficial Si layer thickness on band-to-band tunneling current characteristics in ultra-thin n-channel metal-oxide-semiconductor field-effect-transistor by separation by IMplanted OXygen (nMOSFET/SIMOX)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; DIFFUSION IN SOLIDS; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRON TUNNELING; GATES (TRANSISTOR); SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SURFACE PROPERTIES; ULTRATHIN FILMS;

EID: 0031097840     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l264     Document Type: Article
Times cited : (10)

References (12)
  • Reference 정보가 존재하지 않습니다.

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.