Influences of superficial Si layer thickness on band-to-band tunneling current characteristics in ultra-thin n-channel metal-oxide-semiconductor field-effect-transistor by separation by IMplanted OXygen (nMOSFET/SIMOX)

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 3 A, 1997, Pages

  Ishiyama, Toshihiko ^a   Omura, Yasuhisa ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; DIFFUSION IN SOLIDS; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRON TUNNELING; GATES (TRANSISTOR); SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SURFACE PROPERTIES; ULTRATHIN FILMS;

BAND TO BAND TUNNELING CURRENT CHARACTERISTICS; SEPARATION BY IMPLANTED OXYGEN (SIMOX);

MOSFET DEVICES;

EID: 0031097840     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l264     Document Type: Article

References (12)