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Volumn 36, Issue 3 A, 1997, Pages
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Influences of superficial Si layer thickness on band-to-band tunneling current characteristics in ultra-thin n-channel metal-oxide-semiconductor field-effect-transistor by separation by IMplanted OXygen (nMOSFET/SIMOX)
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Author keywords
[No Author keywords available]
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Indexed keywords
BAND STRUCTURE;
DIFFUSION IN SOLIDS;
ELECTRIC CURRENTS;
ELECTRIC FIELDS;
ELECTRON TUNNELING;
GATES (TRANSISTOR);
SEMICONDUCTING SILICON;
SEMICONDUCTOR DEVICE MODELS;
SEMICONDUCTOR DOPING;
SURFACE PROPERTIES;
ULTRATHIN FILMS;
BAND TO BAND TUNNELING CURRENT CHARACTERISTICS;
SEPARATION BY IMPLANTED OXYGEN (SIMOX);
MOSFET DEVICES;
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EID: 0031097840
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.36.l264 Document Type: Article |
Times cited : (10)
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References (12)
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