Dual-gate electron emission structure with nanotube-on-emitter for X-ray generation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 9, 2002, Pages 5551-5556

  Nicolaescu, Dan ^a,b   Kanemaru, Seigo ^a   Filip, Valeriu ^a   Itoh, Junji ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF BUCHAREST   (Romania)

Author keywords

Electron beam focusing; Field emission; Nanotubes; Vacuum microelectronics; X ray generation

Indexed keywords

ELECTRODES; ELECTRON BEAMS; ELECTRON EMISSION; MICROELECTRONICS; VACUUM; X RAY ANALYSIS;

X-RAY GENERATION;

CARBON NANOTUBES;

EID: 0036757947     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.5551     Document Type: Article

References (68)

1. A.G. Rinzler, J.H. Hafner, P. Nikolaev, L. Lou, S.G. Kim, D. Tomanek, P. Nordlander, D.T. Colbert and R.E. Smalley: Science 269 (1995) 1550.
2. W.A. deHeer, A. Chatelain and D. Ugarte: Science 270 (1995) 1179.
3. W.A. deHeer, J.M. Bonard, K. Fauth, A. Chatelain, L. Forro and D. Ugarte: Adv. Mater. 9 (1997) 87.
4. Q.H. Wang, T.D. Corrigan, J.Y. Dai, R.P.H. Chang and A.R. Krauss: Appl. Phys. Lett. 70 (1997) 3308.
5. J.M. Bonard, J.P. Salvetat, T. Stockli, L. Forro and A. Chatelain: Appl. Phys. A 69 (1999) 245.
6. S.S. Fan, M.G. Chapline, N.R. Franklin, T.W. Tombler, A.M. Cassell and H.J. Dai: Science 283 (1999) 512.
7. W. Zhu, C. Bower, O. Zhou, G. Kochanski and S. Jin: Appl. Phys. Lett. 75 (1999) 873.
8. S.S. Fan, W.J. Liang, H.Y. Dang, N. Franklin, T. Tombler, M. Chapline and H.J. Dai: Physica E 8 (2000) 179.
9. A.N. Obraztsov, I. Pavlovsky, A.P. Volkov, E.D. Obraztsova, A.L. Chuvilin and V.L. Kuznetsov: J. Vac. Sci. Technol. B 18 (2000) 1059.
10. J. Robertson: Mater. Res. Soc. Symp. Proc. 621 (2000) R1.1.1.
11. L. Nilsson, O. Groening, C. Emmenegger, O. Kuettel, E. Schaller, L. Schlapbach, H. Kind, J.-M. Bonard and K. Kern: Appl. Phys. Lett. 76 (2000) 2071.
12. O. Gröning, O.M. Küttel, Ch. Emmenegger, P. Gröning and L. Schlapbach: J. Vac. Sci. Technol. B 18 (2000) 665.
13. Y.J. Yoon and H.K. Balk: J. Vac. Sci. Technol. B 19 (2000) 27.
14. Z.W. Pan, F.C.K. Au, H.L. Lai, W.Y. Zhou, L.F. Sun, Z.Q. Liu, D.S. Tang, C.S. Lee, S.T. Lee and S.S. Xie: J. Phys. Chem. B 105 (2001) 1519.
15. K. Matsumoto, S. Kinosita and Y. Gotoh, T. Uchiyama, S. Manalis and C. Quate: Appl. Phys. Lett. 78 (2001) 539.
16. J.L. Kwo, C.C. Tsou and M. Yokoyama, I.N. Lin, C.C. Lee, W.C. Wang and F.Y. Chuang: J. Vac. Sci. Technol. B 19 (2001) 23.
17. N.S. Xu, Y. Chen, S.Z. Deng, J. Chen, X.C. Ma and E.G. Wang: J. Phys. D 34 (2001) 1597.
18. M.R. Chiang, K.S. Liu, T.S. Lai, C.H. Tsai, H.F. Cheng and I.N. Lin: J. Vac. Sci. Technol. B 19 (2001) 1034.
19. K.H. Park, S. Choi, K.M. Lee, S. Lee and K.H. Koh: J. Vac. Sci. Technol. B 19 (2001) 958.
20. J.I. Sohn, S.H. Lee, Y.H. Song, S.Y. Choi, K.I. Cho and K.S. Nam: Curr. Appl. Phys. 1 (2001) 61.
21. L. Nilsson, O. Groening, P. Groening and L. Schlapbach: Appl. Phys. Lett. 79 (2001) 1036.
22. K.A. Dean, T.P. Burgin and B.R. Chalamala: Appl. Phys. Lett. 79 (2001) 1873.
23. J.M. Bonard, R. Kurt and C. Klinke: Chem. Phys. Lett. 343 (2001) 21.
24. J.M. Bonard, H. Kind, T. Stöckli and L.O. Nilsson: Solid-State Electron. 45 (2001) 893.
25. H. Murakami, M. Hirakawa, C. Tanaka and H. Yamakawa: Appl. Phys. Lett. 76 (2000) 1776.
26. J.M. Bonard, N. Weiss, H. Kind, T. Stöckli, L. Fortó, K. Kern and A. Châtelain: Adv. Mater. 13 (2001) 184.
27. M.A. Guillorn, M.L. Simpson, G.J. Bordonaro, V.I. Merkulov, L.R. Baylor and D.H. Lowndes: J. Vac. Sci. Technol. B 19 (2001) 573.
28. J.I. Sohn, S. Lee, Y.H. Song, S.Y. Choi, K.I. Cho and K.S. Nam: Appl. Phys. Lett. 78 (2001) 901.
29. Q.H. Wang, A.A. Setlur, J.M. Lauerhaas, J.Y. Dai, E.W. Seelig and R.P.H. Chang: Appl. Phys. Lett. 72 (1998) 2912.
30. W.B. Choi, D.S. Chung, J.H. Kang, H.Y. Kim, Y.W. Jin, I.T. Han, Y.H. Lee, J.E. Jung, N.S. Lee, G.S. Park and J.M. Kim: Appl. Phys. Lett. 75 (1999) 3129.
31. W.B. Choi, Y.H. Lee, N.S. Lee, J.H. Kang, S.H. Park, H.Y. Kim, D.S. Chung, S.M. Lee, S.Y. Chung and J.M. Kim: Jpn. J. Appl. Phys. 39 (2000) 2560.
32. J.H. Kang, Y.S. Choi, W.B. Choi, N.S. Lee, Y.J. Park, J.H. Choi, H.Y. Kim, Y.J. Lee, D.S. Chung, Y.W. Jin, J.H. You, S.H. Jo, J.E. Jung and J.M. Kim: Mater. Res, Soc. Symp. Proc. 621 (2000) R5.2.1.
33. J.M. Kim, W.B. Choi, N.S. Lee and J.E. Jung: Diamond Relat. Mater. 9 (2000) 1184.
34. J.L. Kwo, M. Yokoyama, W.C. Wang, F.Y. Chuang and I.N. Lin: Diamond Relat. Mater. 9 (2000) 1270.
35. N.S. Lee, D.S. Chung, J.H. Kang, H.Y. Kim, S.H. Park, Y.W. Jin, Y.S. Choi, I.T. Han, N.S. Park, M.J. Yun, J.E. Jung, C.J. Lee, J.H. You, S.H. Jo, C.G. Lee and J.M. Kim: Jpn. J. Appl. Phys. 39 (2000) 7154.
36. W.B. Choi, Y.W. Jin, H.Y. Kim, S.J. Lee, M.J. Yun, J.H. Kang, Y.S. Choi, N.S. Park, N.S. Lee and J.M. Kim: Appl. Phys. Lett. 78 (2001) 1547.
37. S.J. Chung, S.H. Lim, C.H. Lee and J. Jang: Diamond Relat. Mater. 10 (2001) 248.
38. N.S. Lee, D.S. Chung, I.T. Han, J.H. Kang, Y.S. Choi, H.Y. Kim, S.H. Park, Y.W. Jin, W.K. Yi, M.J. Yun, J.E. Jung, C.J. Lee, J.H. You, S.H. Jo, C.G. Lee and J.M. Kim: Diamond Relat. Mater. 10 (2001) 265.
39. Y. Nakayama and S. Akita: Synth. Met. 117 (2001) 207.
40. Q.H. Wang, M. Yah and R.P.H. Chang: Appl. Phys. Lett. 78 (2001) 1294.
41. Y. Saito, S. Uemura and K. Hamaguchi: Jpn. J. Appl. Phys. 37 (1998) L346.
42. Y. Saito, K. Hamaguchi, S. Uemura, K. Uchida, Y. Tasaka, F. Ikazaki, M. Yumura, A. Kasuya and Y. Nishina: Appl. Phys. A 67 (1998) 95.
43. Y. Saito, K. Hamaguchi, R. Mizushima, S. Uemura, T. Nagasako, J. Yotani and T. Shimojo: Appl. Surf. Sci. 146 (1999) 305.
44. Y. Saito and S. Uemura: Carbon 38 (2000) 169.
45. R. Rosen, W. Simendinger, C. Debbault, H. Shimoda, L. Fleming, B. Stoner and O. Zhou: Appl. Phys. Lett. 76 (2000) 1668.
46. J.M. Bonard, T. Stockli, O. Noury and A. Chatelain: Appl. Phys. Lett. 78 (2001) 2775.
47. J.L. Kwo, M. Yokoyama, C.C. Lee, F.Y. Chuang and I.N. Lin: J. Vac. Sci. Technol. B 19 (2001) 1023.
48. W.I. Karain, L.V. Knight, D.D. Allread and A.R. Mena: Nanostruct. Mater. 3 (1993) 419.
49. H. Ijiri, H. Ohgaki, Y. Uozumi, T. Sakae and M. Matoba: J. Nucl. Sci. Technol. 33 (1996) 423.
50. P. Rangsten, C. Ribbing, C. Strandman, B. Hok and L. Smith: Sens. Actuat. A 82 (2000) 24.
51. Y. Taima and M. Hatakeyama: Japan Patent 09-180894 (1997).
52. E. Tanabe: Japan Patent 2000-308294 (2000).
53. R. Shefer, R.E. Klinkowstein and B.J. Hughey: U.S. Patent 6148061 (2000).
54. R. Baptist: U.S. Patent 6.259.765 (2001).
55. H.H. Busta, J.M. Chen, Z. Shen, K. Janson, S. Rizkowski, J. Matey and A. Lanzillotto: Proc. 14th Int. Vacuum Microelectronics Conf., U.C. Davis, Ca., U.S.A., August 12-16, 2001, p. 9.
56. H. Sugie, M. Tanemura, V. Filip, K. Iwata, K. Takahashi and F. Okuyama: Appl. Phys. Lett. 78 (2001) 2578.
57. V. Filip, D. Nicolaescu and F. Okuyama: J. Vac. Sci. Technol. B 19 (2001) 1016.
58. V. Filip, D. Nicolaescu, M. Tanemura and F. Okuyama: Ultramicroscopy 89 (2001) 39.
59. D.A. Dahl: Simion 3D Version 7.0 User's Manual INEEL-95/0403, Idaho National Engineering and Environmental Laboratory, Idaho Falls, ID 83415 (2000).
60. R.H. Good jr. and E.W. Müller: Field Emission, ed. S. Flügge (Springer-Verlag, Berlin, 1956) Handbuch der Physik Vol. 21.
61. M.S. Dresselhaus, G. Dresselhaus and P.C. Eklund: Science of Fulerenes and Carbon Nanotabes (Academic, New York, 1996) Chap. 19.
62. R. Saito, G. Dresselhaus and M.S. Dresselhaus: Physical Properties of Carbon Nanotubes (Imperial College Press, London, 1998).
63. D. Nicolaescu, V. Filip and J. Itoh: J. Vac. Sci. Technol. B 19 (2001) 892.
64. T. Yoshimoto, T. Iwata, R. Minesawa and K. Matsumoto: Jpn. J. Appl. Phys. 40 (2001) L 983.
65. M.A. Guillorn, A.V. Melechko, V.I. Merkulov, E.D. Ellis, C.L. Britton, M.L. Simpson, D.H. Lowndes and L.R. Baylor: Appl. Phys. Lett. 79 (2001) 3506.
66. E. Yenilmez, Q. Wang, R.J. Chen, D. Wang and H. Dai: Appl. Phys. Lett. 80 (2002) 2225.
67. D. Nicolaescu, V. Filip and P.R. Wilshaw: Appl. Surf. Sci. 94/95 (1996) 79.
68. D. Nicolaescu, V. Filip and J. Itoh: Jpn. J. Appl. Phys. 40 (2001) 83.