Emission properties from carbon nanotube field emitter arrays (FEAs) grown on Si emitters

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 9 A/B, 2001, Pages

  Yoshimoto, Tomomi ^a   Iwata, Tatsuo ^a   Minesawa, Ryuutaro ^b   Matsumoto, Kazuhiko ^c  

^a TOKAI UNIVERSITY   (Japan)

^b MEIJI UNIVERSITY   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Carbon nanotube; FEAs; Field emitter; Flat panel display

Indexed keywords

ELECTRON EMISSION; FIELD PROGRAMMABLE GATE ARRAYS; FLAT PANEL DISPLAYS; PHOSPHORS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; ULTRAHIGH VACUUM;

EMISSION CURRENT; FIELD EMITTER ARRAYS; FOWLER-NORDHEIM RELATIONSHIP;

CARBON NANOTUBES;

EID: 0035885691     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l983     Document Type: Letter

References (10)