SCOPUS 정보 검색 플랫폼

Applied Surface Science

Volumn 94-95, Issue , 1996, Pages 79-86

Modelling of the field emission microtriode with emitter covered with porous silicon

(3) Nicolaescu, Dan a Filip, Valeriu b Wilshaw, P R c

a Research Institute for Electronics Bucharest (Romania)

b UNIVERSITY OF BUCHAREST (Romania)

c UNIVERSITY OF OXFORD (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CALCULATIONS; CAPACITANCE; CURRENT DENSITY; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; MATHEMATICAL MODELS; NUMERICAL ANALYSIS; POROUS SILICON; TRANSCONDUCTANCE;

BLUNT EMITTERS; ELECTRIC FIELD MULTIPLICATION APPROXIMATION; FOWLER-NORDHEIM CURRENT DENSITY; NANO EMITTERS; SHARP EMITTERS; VERTICAL FIELD EMISSION MICROTRIODE;

ELECTRON EMISSION;

EID: 0012550033 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/0169-4332(95)00354-1 Document Type: Article

Times cited : (11)

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