Under-gate triode type field emission displays with carbon nanotube emitters

Materials Research Society Symposium-Proceedings

Volumn 621, Issue , 2000, Pages R521-R525

  Kang, J H ^a   Choi, Y S ^a   Choi, W B ^a   Lee, N S ^a   Park, Y J ^a   Choi, J H ^a   Kim, H Y ^a   Lee, Y J ^a   Chung, D S ^a   Jin, Y W ^a   You, J H ^b   Jo, S H ^b   Jung, J E ^a   Kim, J M ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Samsung SDI   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; ELECTRODES; ELECTRON EMISSION; GATES (TRANSISTOR); THRESHOLD VOLTAGE; TRIODES;

CARBON NANOTUBE;

FIELD EMISSION DISPLAYS;

EID: 0034431044     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: 10.1557/proc-621-r5.2.1     Document Type: Article

References (7)

1. Vacuum microelectronics