SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 343-344, Issue 1-2, 1999, Pages 575-578

Raman and reflection anisotropy spectroscopic studies of GaN and AlN growth on GaAs(100)

(6) Chalker, Paul R a Joyce, Tim B a Farrell, Trevor a Johnston, Colin b Crossley, Alison b Eccles, Julie c

a UNIVERSITY OF LIVERPOOL (United Kingdom)

b RICARDO UK LTD (United Kingdom)

c NONE

Author keywords

Aluminium nitride; Chemical Beam Epitaxy; Gallium nitride; Nitrides; Raman Spectroscopy; Reflectance Anisotropy Spectroscopy

Indexed keywords

ANISOTROPY; CHEMICAL BEAM EPITAXY; CRYSTALLIZATION; LIGHT REFLECTION; NITRIDES; RAMAN SCATTERING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

ALUMINUM NITRIDE; GALLIUM NITRIDE; REFLECTANCE ANISOTROPY SPECTROSCOPY;

SEMICONDUCTING FILMS;

EID: 0032661445 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(98)01723-4 Document Type: Article

Times cited : (2)

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