Angular dependence of SiO2 etch rate at various bias voltages in a high density CHF3 plasma

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 20, Issue 5, 2002, Pages 1808-1814

  Lee, Gyeo Re ^a   Hwang, Sung Wook ^a   Min, Jae Ho ^a   Moon, Sang Heup ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ETCHING; FLUOROCARBONS; IONS; PLASMA THEORY; PLASTIC FILMS; SUBSTRATES; SURFACE PHENOMENA;

NORMALIZED ETCH RATE (NER);

SILICA;

EID: 0036749643     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1503786     Document Type: Article

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