Evaluation of the silicon capping technique in SIMS

Surface and Interface Analysis

Volumn 33, Issue 9, 2002, Pages 735-741

  Ng, C M ^a   Wee, A T S ^a,d   Huan, C H A ^b   Ho, C S ^c   Yakovlev, N ^a   See, A ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b Thin Film Department   (Singapore)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^d CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

B; Si; SIMS; Ultrashallow

Indexed keywords

EROSION; ION IMPLANTATION; MONOLAYERS; OXIDES; POLYSILICON; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING; SPUTTER DEPOSITION; SUBSTRATES; SURFACES;

CRYSTALLINE SILICON WAFER; SILICON CAPPING; ULTRASHALLOW SECONDARY ION MASS SPECTROMETRY;

SILICON WAFERS;

EID: 0036748440     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.1443     Document Type: Article

References (27)

1. Jiang ZX, Alkemade PFA. Surf. Interface Anal. 1991; 27: 125.
2. Vandervorst W, Shepherd FR. J. Vac. Sci. Technol. A 1987; 5: 313.
3. Alkemade PFA, Jiang ZX, Visser CCG, Radelaar S, Arnoldbik WM. J. Vac. Sci. Technol. B 1998; 16: 373.
4. Wittmaack K. J. Vac. Sci. Technol. B 1998; 16: 2776.
5. Wilson RG, Stevie FA, Magee CW. Secondary Ion Mass Spectrometry. John Wiley: New York, 1989; 3.1-1-3.1.7.
6. Wittmaack K, Corcoran SF. J. Vac. Sci. Technol. B 1998; 16: 272.
7. Jiang ZX, Alkemade PFA. J. Vac. Sci. Technol. B 1998; 16: 1971.
8. Stevie FA, Martin EP Jr, Kahora PM, Cargo JT, Nanda AK, Harrus AS, Muller AJ, Krautter HW. J. Vac. Sci. Technol. A 1991; 9: 2813.
9. Slusser GJ, MacDowell L. J. Vac. Sci. Technol. A 1987; 5: 1971.
10. Williams P, Baker JE. App. Phys. Lett. 1980; 36: 842.
11. Van Berkum JGM. In Secondary Ion Mass Spectrometry, SIMS XI, Gillen G, Lareau R, Bennett J, Stevie F (eds). John Wiley: Chichester, 1998; 187-190.
12. Corcoran SF, Felch SB. J. Vac. Sci. Technol. B 1992; 10: 342.
13. Bennett J, Diebold A. In Secondary Ion Mass Spectrometry, SIMS XII, Benninghoven A, Bertrand P, Migeon H-N, Werner HW (eds). Elsevier: Amsterdam, 2000; 541 - 544.
14. Ng CM, Wee ATS, Huan CHA, See A. Proc. SPIE 2000; 4227: 90.
15. Wittmaack K, Wach W. Nucl. Instrum. Methods 1981; 191: 327.
16. Wittmaack K. J. Vac. Sci. Technol. B 2000; 18: 1.
17. http://www.research.ibm.com/ionbeams/home.htm#SRIM
18. Gräf D, Grundner M, Schulz R, Mühlhoff L. J. Appl. Phys. 1990; 68: 5155.
19. Ng CM, Wee ATS, Huan CHA, See A. J. Vac. Sci. Technol. B 2001; 19: 829.
20. Park J, Huh YJ, Hwang H. Appl. Phys. Lett. 1999; 74: 1248.
21. Benninghoven A. Surf. Sci. 1975; 53: 596.
22. Deline VR, Katz W, Evans CA Jr, Williams P. Appl. Phys. Lett. 1978; 33: 832.
23. Wittmaack K. Surf. Sci. 1981; 112: 168.
24. Janssens T, Vandervorst W. In Secondary Ion Mass Spectrometry, SIMS XII, Bennighoven A, Bertrand P, Migeon H-N, Werner HW (eds). Elsevier: Amsterdam, 2000; 151 - 154.
25. Elst K, Vandervorst W, Alay J, Snauwaert J, Hellemans L. J. Vac. Sci. Technol. B 1993; 16: 1968.
26. Wittmaack K. Philos. Trans. R. Soc. London A 1996; 354: 2731.
27. Dowsett MG, Ormsby TJ, Cooke GA, Chu DP. J. Vac. Sci. Technol. B 1998; 16: 302.