Ultra shallow depth profiling of B deltas in Si using a CAMECA IMS 6f

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4227, Issue , 2000, Pages 90-97

  Ng, C M ^a   Wee, A T S ^a   Huan, C H A ^a   See, A ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Boron deltas; Low energy profiling; Oxygen flooding; Sample rotation; Secondary ion mass spectrometry

Indexed keywords

ION BEAMS; MIXING; OXYGEN; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICON WAFERS; SURFACE ROUGHNESS;

BORON DELTAS; GATE OXIDES; ION BEAM MIXING; LOW ENERGY DEPTH PROFILING; OXYGEN FLOODING; ULTRASHALLOW JUNCTIONS;

SECONDARY ION MASS SPECTROMETRY;

EID: 0034454358     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.405374     Document Type: Conference Paper

References (20)