Low-resistance and thermally stable Pd/Ru ohmic contacts to p-type GaN

Journal of Electronic Materials

Volumn 31, Issue 9, 2002, Pages 903-906

  Jang, Ja Soon ^a   Lee, Chang Won ^a   Park, Seong Ju ^a   Seong, Tae Yeon ^a   Ferguson, I T ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Gallium nitride; Ohmic contact; Schottky barrier; Specific contact resistance; Surface Fermi level

Indexed keywords

ANNEALING; ELECTRIC RESISTANCE; FERMI LEVEL; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM COMPOUNDS; THERMIONIC EMISSION; THERMODYNAMIC STABILITY;

CONTACT RESISTANCE;

OHMIC CONTACTS;

EID: 0036738864     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-002-0181-9     Document Type: Article

References (26)

1. S. Nakamura, M. Senoh, N. Iwasa, and S. Nagahama, Jpn. J. Appl. Phys. 34, L797 (1995).
2. S. Nakamura, M. Senoh, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, Jpn. J. Appl. Phys. 35, L217 (1996).
3. M. Asif. Khan, A.R. Bhattarai, J.N. Kuznia, and D.T. Olson, Appl. Phys. Lett. 63, 1214 (1993).
4. M. Asif Khan, J.N. Kuznia, A.R. Bhattarai, and D.T. Olson, Appl. Phys. Lett. 62, 1786 (1993).
5. M. Asif Khan, J.N. Kuznia, D.T. Olson, J.M. Van Hove, M. Blasingame, and L.F. Reitz, Appl. Phys. Lett. 60, 2917 (1993).
6. J.T. Trexler, S.J. Pearton, P.H. Holloway, M.G. Mier, K.R. Evans, and R.F. Karlicek, MRS Symp. Proc. 449, 1091 (1997).
7. J.K. Sheu, Y.K. Su, G.C. Chi, W.C.Chen, C.Y. Chen, J.M. Hong, Y.C. Yu, C.W. Yang, and E.K. Lin, J. Appl. Phys. 83, 3172 (1998).
8. J.K. Sheu, Y.K. Su, G.C. Chi, P.L. Koh, M.J. Jou, C.M. Chang, C.C. Liu, and W.C. Hung, Appl. Phys. Lett. 74, 2340 (1999).
9. T. Maeda, Y. Koide, and M. Murakami, Appl. Phys. Lett. 75, 4145 (1999).
10. J.-S. Jang, K.H. Park, H.K. Jang, H.G. Kim, and S.J. Park, J. Vac. Sci. Technol. B 16, 3105 (1998).
11. J.-S. Jang, S.J. Park, and T.-Y. Seong, J. Electrochem. Soc. 146, 3425 (1999).
12. T. Kim, J. Kim, S. Chae, and T. Kim, MRS Symp. Proc. 468, 427 (1998).
13. J.-L. Lee, J.K. Kim, J.W. Lee, Y.J. Park, and T. Kim, Solid-State Electron. 43, 435 (1999).
14. J.K. Kim, J.-L. Lee, J.W. Lee, H.E. Shin, Y.J. Park, and T. Kim, Appl. Phys. Lett. 73, 2953 (1998).
15. D.J. King, L. Zhang, J.C. Ramer, S.D. Hersee, and L.F. Lester, MRS Symp. Proc. 468, 421 (1997).
16. J.-S. Jang, S.J. Park, and T.-Y. Seong, J. Vac. Sci. Technol. B 17, 2667 (1999).
17. J.-S Jang and T.-Y. Seong, Appl. Phys. Lett. 76, 2743 (2000).
18. J.-S. Jang and T.-Y. Seong, J. Appl. Phys. 88, 3064 (2000).
19. J. Sun, K.A. Rickert, J.M. Redwing, A.B. Ellis, F.J. Himpsel, and T.F. Kuech, Appl. Phys. Lett. 76, 415 (2000).
20. J.-S. Jang, S.J. Park, and T.-Y. Seong, Appl. Phys. Lett. 76, 2898 (2000).
21. G.K. Reeves and H.B. Harrison, IEEE Electron. Dev. Lett. 5, 111 (1982).
22. E.H. Rhoderick and R.H. Williams, Metal-Semiconductor Contacts (Oxford: Clarendon, 1988).
23. A.Y.C. Yu, Solid State Electron. 13, 239 (1970).
24. J.-S. Jang and T.-Y. Seong, Kwangju Institute of Science and Technology, unpublished research.
25. J.-S. Jang, S.H. Han, S.W. Kim, S.J. Park, and T.-Y. Seong, IPAP Conf. Ser. 1, 805 (2000).
26. J.-S. Jang and T.-Y. Seong, Kwangju Institute of Science and Technology, unpublished research.