High efficiency GaAs-on-Si solar cells with high Voc using graded GeSi buffers

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn 2000-January, Issue , 2000, Pages 1006-1011

  Carlin, J A ^a   Hudait, M K ^a   Ringel, S A ^a   Wilt, D M ^b   Clark, E B ^b   Leitz, C W ^c   Currie, M ^c   Langdo, T ^c   Fitzgerald, E A ^c  

^a The Ohio State University   (United States)

^b NASA GLENN RESEARCH CENTER   (United States)

^c USA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; EFFICIENCY; GALLIUM ARSENIDE; GERMANIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; SILICON; SILICON WAFERS; SOLAR CELLS;

ANTIPHASE DOMAINS; CARRIER COLLECTION; EXTERNAL QUANTUM EFFICIENCY; MINORITY CARRIER LIFETIMES; MONOLAYER-SCALE CONTROL; RESIDUAL DISLOCATIONS; SINGLE-JUNCTION CELLS; THREADING DISLOCATION DENSITIES;

SILICON SOLAR CELLS;

EID: 27944460363     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.916056     Document Type: Conference Paper

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