Effects of H plasma passivation on the optical and electrical properties of GaAs-on-Si

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 11 PART A, 1998, Pages

  Wang, Gang ^a   Zhao, Guang Yuan ^a   Soga, Tetsuo ^a   Jimbo, Takashi ^a   Umeno, Masayoshi ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

DLTS; GaAs on Si; H plasma passivation; Photoluminescence; Time resolved photoluminescence

Indexed keywords

ANNEALING; CHARGE CARRIERS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DISLOCATIONS (CRYSTALS); HYDROGEN; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PASSIVATION; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON;

HYDROGEN PLASMA PASSIVATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032207088     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l1280     Document Type: Article

References (17)

1. T. Soga, T. Kato, M. Yang, T, Jimbo and M. Umeno: J. Appl. Phys. 78 (1995) 4196.
2. T. Egawa, H. Tada, Y. Kobayashi, T. Soga, T. Jimbo and M. Umeno: Appl. Phys. Lett. 57 (1990) 1179.
3. S. F. Fang, K. Adomi, S. Lyer, H. Morkoc, H. Zabel, C. Choi and N. Otsuka: J. Appl. Phys. 68 (1990) R31.
4. M. Akiyama, Y. Kawarada and K. Kaminishi: J. Cryst. Growth 68 (1984) 21.
5. K. Nozawa and Y. Horikoshi: Jpn. J. Appl. Phys. 30 (1991) L668.
6. M. Yamaguchi, A. Yamamoto, M. Tachikawa, Y. Itoh and M. Sugo: Appl. Phys. Lett. 53 (1988) 2293.
7. S. J. Pearton, W. C. Dautremont-Smith, J. Chevallier, C. W. Tu and K. D. Cummings: J. Appl. Phys. 59 (1986) 2821.
8. B. Chatterjee and S. A. Ringel: J. Appl. Phys. 77 (1995) 3885.
9. S. J. Pearton, J. W. Corbett and M. Stavola: Hydrogen in Crystalline Semiconductors (Springer, Berlin, 1992).
10. S. J. Pearton, C. S. Wu, M. Stavola, F. Ren, J. Lopata, W. C. Dautremont-Smith, S. M. Vernon and V. E. Haven: Appl. Phys. Lett. 51 (1987) 496.
11. J. M. Zavada, S. J. Pearton, R. G. Wilson, C. S. Wu, M. Stavola, F. Ren, J. Lopata, W. C. Dautremont-Smith and S. W. Novak: J. Appl. Phys. 65 (1989) 347.
12. J. Chevallier, W. C. Dautremont- Smith, C. W. Tu and S. J. Pearton: Appl. Phys. Lett. 49 (1985) 406.
13. V. Alberts: Jpn. J. Appl. Phys. 33 (1994) 611.
14. T. Yodo, M. Tamura and T. Saitoh: J. Cryst. Growth 141 (1994) 331.
15. R. K. Ahrenkiel, M. M. Al-Jassim, B. Keyes, D. Dunlavy, K. M. Jones, S. M. Vernon and T. M. Dixon: J. Electrochem. Soc. 137 (1990) 996.
16. T. Soga, T. Jimbo and M. Umeno: Jpn. J. Appl. Phys. 33 (1994) 1494.
17. T. Soga, S. Sakai, M. Umeno and S. Hattori: Jpn. J. Appl. Phys. 25 (1986) 1510.