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Applied Surface Science

Volumn 102, Issue , 1996, Pages 3-5

Theory of surfactant-mediated growth on semiconductor surfaces

(2) Kaxiras, Efthimios a Kandel, Daniel a

a HARVARD UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ARSENIC; COMPUTER SIMULATION; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; FILM GROWTH; ION EXCHANGE; MONTE CARLO METHODS; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SURFACE ACTIVE AGENTS;

FIRST PRINCIPLES CALCULATIONS; HETEROEPITAXIAL GROWTH; HOMOEPITAXIAL GROWTH; SOLID ON SOLID SIMULATIONS; SURFACTANT EFFECT;

SEMICONDUCTOR GROWTH;

EID: 0030564925 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/0169-4332(96)00008-6 Document Type: Article

Times cited : (7)

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