A novel fabrication process for polysilicon thin film transistors with source/drain contacts formed by deposition and lift-off of highly doped layers

Solid-State Electronics

Volumn 46, Issue 9, 2002, Pages 1351-1358

  Cuscuna M ^a   Bonfiglietti, A ^a   Carluccio, R ^a   Mariucci, L ^a   Mecarini, F ^a   Pecora, A ^a   Stanizzi, M ^a   Valletta, A ^a   Fortunato, G ^a  

^a CNR   (Italy)

Author keywords

Excimer laser annealing; Polycrystalline silicon; Thin film transistors

Indexed keywords

ANNEALING; CRYSTALLIZATION; DEPOSITION; EXCIMER LASERS; FABRICATION; ION IMPLANTATION; LEAKAGE CURRENTS; POLYSILICON; SEMICONDUCTOR DOPING;

EXCIMER LASER ANNEALING;

THIN FILM TRANSISTORS;

EID: 0036721729     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00082-5     Document Type: Article

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