Numerical analysis of poly-TFTs under off conditions

Solid-State Electronics

Volumn 41, Issue 4, 1997, Pages 627-633

  Colalongo, L ^a   Valdinoci, M ^a   Baccarani, G ^a   Migliorato, P ^b   Tallarida, G ^b   Reita, C ^b,c  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c THALES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRON TUNNELING; LEAKAGE CURRENTS; NUMERICAL ANALYSIS; POLYCRYSTALLINE MATERIALS; THERMAL EFFECTS;

ACTIVE MATRIX FLAT PANEL DISPLAYS (AMFPD); POLYCRYSTALLINE SILICON THIN FILM TRANSISTORS;

THIN FILM TRANSISTORS;

EID: 0031123149     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(96)00201-8     Document Type: Article

References (18)

1. Wu, I. W., Jackson, W., Huang, T., Lewis, A. and Chiang, A., IEEE-EDL, 1990, 11, 167.
2. Seki, S., Kogure, O. and Tsujiyama, B., IEEE-EDL, 1987, 8, 434.
3. Adan, A. O., Htsutsui, Horita, M., Fujimoto, K., Nakai, K., Infushi, T. and Miyake, R., in Proc. Int. Semic. Dev. Res Symp. Charlottsville, Charlottsville, University of Virginia, VA, 1991, p. 525.
4. Fossum, J., Ortiz-Conde, A., Shichijo, H. and Banerjee, S. K. IEEE-TED, 1985, ED-32, 1878.
5. Wu, I.-W., Lewis, A. G., Huang, T. Y., Jackson, W. B. and Chiang, A., in IEDM'90 Technical Digest, 1990, p. 867.
6. Ayres, J. R., Brotherton, S. D. and Young, N. D., Optoelectronics, 1992, 7, 301.
7. Rodriguez, A., Moreno, E. G., Pattyn, H., Nijs, J. F. and Mertens, R. P., IEEE-TED, 1993, ED-40, 938.
8. Migliorato, P., Reita, C., Tallarida, G., Quinn, M. and Fortunato, G., Solid-State Electronics, 1995, 38(12), 2075.
9. Brotherton, S., Ayres, J. and Trainor, M., Journal of Applied Physics, 1996, 79(2), 895.
10. Valdinoci, M., Gnudi, A., Rudan, M. and Fortunato, G., Analysis of Amorphous-Silicon Devices, in Proc. of the 1994 NUPAD Conference, 1994, p. 19.
11. Fortunato, G. and Migliorato, P., Journal of Applied Physics, 1990, 68(5), 2463.
12. Colalongo, L. et al., Analysis and Characterization of Polycrystalline Silicon Thin-Film Transistors, in Proc. of the 1995 ESSDERC Conference, 1995, pp. 75-78.
13. Graaf, H. C. D., Huybers, M. and Groot, J. G. D., Solid-State Electronics, 1982, 25(1), 67.
14. Hartke, J. L., Journal of Applied Physics, 1968, 39, 4871.
15. Vincent, G., Chantre, A. and Bois, D., Journal of Applied Physics, 1979, 50(8), 5484.
16. Hurkx, G. A. M., Klaassen, D. B. M. and Knuver, M. P. G., IEEE-TED, 1992, ED-39(2), 331.
17. Hurkx, G. A. M., Solid-State Electronics, 1989, 32(8), 665,
18. Kane, E. O., Journal of Applied Physics, 1969, 32(1), 83.