Numerical analysis of electrical characteristics of polysilicon thin film transistors fabricated by excimer laser crystallisation

Electronics Letters

Volumn 34, Issue 9, 1998, Pages 924-926

  Mariucci, L ^a   Giacometti, F ^a   Pecora, A ^a   Massussi, F ^a   Fortunato, G ^a   Valdinoci, M ^b   Colalongo, L ^b  

^a CNR   (Italy)

^b UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTALLIZATION; EXCIMER LASERS; GRAIN BOUNDARIES; NUMERICAL ANALYSIS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS;

NON UNIFORM DEFECT DISTRIBUTION;

THIN FILM TRANSISTORS;

EID: 0032047484     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980619     Document Type: Article

References (10)

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