Control and analysis of leakage currents in poly-Si thin-film transistors

Journal of Applied Physics

Volumn 79, Issue 2, 1996, Pages 895-904

  Brotherton, S D ^a   Ayres, J R ^a   Trainor, M J ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001716550     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.360869     Document Type: Article

References (23)

1. J. G. Fossum, A. Ortiz-Conde, H. Shichijo, and S. K. Banerjee, IEEE Trans. Electron Devices ED-32, 1878 (1985).
2. S. K. Madan and A. D. Antoniadis, IEEE Trans. Electron Devices ED-33, 1518 (1986).
3. D. W. Greve, P. A. Potyraj, and A. M. Guzman, Solid-State Electron. 28, 1255 (1985).
4. S. D. Brotherton, N. D. Young and A. Gill, Solid State Devices, edited by G. Soncini and P. U. Calzolari (Elsevier Science, North-Holland, Amsterdam, 1988), p. 135.
5. S. D. Brotherton, J. R. Ayres and N. D. Young, Solid-State Electron. 34, 671 (1991).
6. I.-W. Wu, A. G. Lewis, T.-Y. Huang, W. B. Jackson, and A. Chiang, IEDM 90, 867 (1990).
7. J. R. Ayres, S. D. Brotherton, and N. D. Young, Optoelectron. Devices Technol. 7, 301 (1992).
8. A. Rodriguez, E. G. Moreno, H. Pattyn, J. F. Nijs, and R. P. Mertens, IEEE Trans. Electron. Devices, ED-40, 938 (1993).
9. A. Pecora, M. Schillizzi, G. Tallarida, G. Fortunate, C. Reita, and P. Migliorato, Solid-State Electron. 38, 845 (1995).
10. P. Migliorato, C. Reita, G. Tallarida, and M. Quinn, Solid-State Electron. 38, 2075 (1995).
11. I.-C. Chen, C. W. Teng, D. J. Coleman and A. Mishimura, IEEE Electron. Device Lett. 10, 216 (1989).
12. V. Nathan and N. C. Das, Trans. IEEE Electron Devices 40, 1888 (1993).
13. L. J. McDaid, S. Hall, W. Eccleston, and J. C. Alderman, Microelectron. Eng. 13, 759 (1989).
14. S. D. Brotherton, J. R. Ayres, D. J. McCulloch and N. D. Young, Physical and Technical Problems of SOI Structures and Devices, edited by J.-P. Colinge, V. S. Lysenko, and A. N. Nazarov (Kluwer Academic, NATO ARW Series, 1995), p. 183.
15. J. Y. Seto, J. Appl. Phys. 46, 5247 (1975).
16. S. D. Brotherton, N. D. Young, M. J. Edwards, A. Gill, M. J. Trainor, J. R. Ayres, I. R. Clarence, R. M. Bunn, and J. P. Gowers, 1994 International Display Research Conference (Society for Information Display, California, 1994), p. 130.
17. G. Vincent, A. Chantre, and D. Bois, J. Appl. Phys. 50, 5484 (1979).
18. M. Hack, I.-W. Wu, and A. G. Lewis. IEDM 93, 385 (1993).
19. J. R. Ayres, J. Appl. Phys. 74, 1787 (1993).
20. P. A. Gough, P. Walker and K. R. Whight, Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs, edited by M. A. Shibib and B. J. Baliga (IEEE, New York, 1991), p. 233.
21. T. E. Seidel, VLSI Technology, edited by S. M. Sze (McGraw-Hill, New York, 1983), p. 233.
22. S. D. Brotherton, J. R. Ayres and M. J. Trainor. Proc. POLYSE 95 (to be published).
23. K. Park, S. Batra, and S. Banerjee, Appl. Phys. Lett. 59, 709 (1991).