An on-state analytical model for the trench insulated gate bipolar transistor (TIGBT)

Solid-State Electronics

Volumn 41, Issue 8, 1997, Pages 1111-1118

  Udrea, F ^a   Amaratunga, G A J ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; COMPUTER SIMULATION; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DIODES; SWITCHING THEORY;

TRENCH INSULATED GATE BIPOLAR TRANSISTORS (TIGBT);

BIPOLAR TRANSISTORS;

EID: 0031212176     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00034-8     Document Type: Article

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