Comparison of emitter concepts for high voltage IGBTs

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1995, Pages 230-235

  Bauer, F ^a   Fichtner, W ^a   Dettmer, H ^a   Bayerer, R ^a   Herr, E ^a   Stockmeier, T ^a   Thiemann, U ^a  

^a ABB Semiconductors Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; GATES (TRANSISTOR); INTEGRATED CIRCUIT LAYOUT; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

CARRIER LIFETIME; INJECTION EFFICIENCY; INSULATED GATE BIPOLAR TRANSISTOR (IGBT); TURN OFF LOSSES;

BIPOLAR TRANSISTORS;

EID: 0029203067     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)