Experimental investigations of 2.5 kV-100 A PT type and NPT type IGBTs

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1995, Pages 70-74

  Takahashi, Yoshikazu ^a   Yoshikawa, Koh ^a   Koga, Takeharu ^a   Soutome, Masayuki ^a   Seki, Yasukazu ^a  

^a FUJI ELECTRIC CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONICS PACKAGING; GATES (TRANSISTOR); POWER ELECTRONICS; RELIABILITY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT); NONPUNCH THROUGH TYPE IGBT; PUNCH THROUGH TYPE IGBT; REVERSE BIASED SAFE OPERATING AREAS;

BIPOLAR TRANSISTORS;

EID: 0029178243     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)