Extraction of extended BSIM3v3.2.2 model card of vertical 130 nm Si p-MOSFET for circuit simulation

IEE Proceedings: Circuits, Devices and Systems

Volumn 149, Issue 4, 2002, Pages 264-270

  Korbel, A ^a   Schulz, T ^a   Mecking, S ^a   Langmann, U ^a  

^a NEC LABORATORIES EUROPE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; COMPUTER SIMULATION; ELECTRIC FREQUENCY MEASUREMENT; NANOTECHNOLOGY; SCATTERING PARAMETERS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; TRANSIENTS;

CAPACITANCE PARAMETERS; CIRCUIT SIMULATION; ON-WAFER MEASUREMENT; TRANSIENT MEASUREMENT;

MOSFET DEVICES;

EID: 0036697671     PISSN: 13502409     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-cds:20020358     Document Type: Article

References (21)

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