Modeling substrate effects in the design of high-speed Si-bipolar IC's

IEEE Journal of Solid-State Circuits

Volumn 31, Issue 10, 1996, Pages 1493-1501

  Pfost, Martin ^a,b   Rein, Hans Martin ^a,b   Holzwarth, Thomas ^c,d,e,f  

^a IEEE

^b RUHR UNIVERSITY BOCHUM   (Germany)

^c Telefunken Microelectronic ^*  (Germany)

^d UNIVERSITY OF ULM   (Germany)

^e DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^f TEMIC Semiconductors   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; COMPUTER SIMULATION; EQUIVALENT CIRCUITS; INTEGRATED CIRCUIT LAYOUT; MATHEMATICAL MODELS; NETWORKS (CIRCUITS); SEMICONDUCTING SILICON; SUBSTRATES;

MODELLING SUBSTRATE EFFECTS; ONWAFER MEASUREMENT; STANDARD TWO DIMENSIONAL DEVICE SIMULATORS;

BIPOLAR INTEGRATED CIRCUITS;

EID: 0030270723     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.540060     Document Type: Article

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