Interlayer atomic diffusion as the reason for self-assembled quantum dot formation

Computer Physics Communications

Volumn 147, Issue 1-2, 2002, Pages 255-258

  Brunev, D V ^a   Neizvestny, I G ^a   Shwartz, Natasha L ^a   Yanovitskaya, Z Sh ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

Diffusion; Epitaxy; Monte Carlo; Quantum dots; Schwoebel barrier; Simulation

Indexed keywords

ATOMS; COMPUTER SIMULATION; DIFFUSION; EPITAXIAL GROWTH; MONTE CARLO METHODS; PROBABILITY; SELF ASSEMBLY; SEMICONDUCTOR GROWTH;

ATOMIC DIFFUSION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036681887     PISSN: 00104655     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0010-4655(02)00258-8     Document Type: Conference Paper

References (18)