Characterizations of GaN films grown with indium surfactant by RF-plasma assisted molecular beam epitaxy

Microelectronics Reliability

Volumn 42, Issue 8, 2002, Pages 1179-1184

  Fong, W K ^a   Zhu, C F ^a   Leung, B H ^a   Surya, C ^a   Sundaravel, B ^b   Luo, E Z ^b   Xu, J B ^b   Wilson, I H ^b  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

^b CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHARACTERIZATION; CRYSTALLIZATION; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SURFACE ACTIVE AGENTS; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS;

ION CHANNELING;

FILM GROWTH;

EID: 0036681528     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(02)00086-0     Document Type: Article

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