Crystalline structure changes in GaN films grown at different temperatures

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 5 B, 1997, Pages

  Lin, Heng Ching ^a   Ou, Jehn ^a   Chen, Wei Kuo ^a   Chen, Wen Hsiung ^a   Lee, Ming Chih ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL STRUCTURE; FILM GROWTH; HIGH TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; THIN FILMS; X RAY CRYSTALLOGRAPHY;

GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0031139367     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l598     Document Type: Article

References (19)