Ion channeling study of GaN single crystals

Materials Science Forum

Volumn 248-249, Issue , 1997, Pages 419-423

  Turos, A ^a,b   Nowicki, L ^a   Stonert, A ^a   Leszczynski M ^c   Grzegory, I ^c   Porowski, S ^c  

^a SOLTAN INSTITUTE FOR NUCLEAR STUDIES   (Poland)

^b Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

^c INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

Crystal Growth; Gallium Nitride; Ion Beam Analysis; Wide Bandgap Semiconductors

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTAL GROWTH; ENERGY GAP; ION BEAMS; SEMICONDUCTING GALLIUM COMPOUNDS;

GALLIUM NITRIDE SINGLE CRYSTALS; ION CHANNELING TECHNIQUE;

SINGLE CRYSTALS;

EID: 0030660865     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

References (6)

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