Extraction of MOSFET threshold voltage, series resistance, effective channel length, and inversion layer mobility from small-signal channel conductance measurement

IEEE Transactions on Electron Devices

Volumn 48, Issue 12, 2001, Pages 2870-2874

  Kong, F C J ^b   Yeow, Y T ^a,b   Yao, Z Q ^a,c  

^a IEEE

^b UNIVERSITY OF QUEENSLAND   (Australia)

^c CYPRESS SEMICONDUCTOR   (United States)

Author keywords

MOSFET threshold voltage; Parameter extraction; Source drain resistance

Indexed keywords

CARRIER MOBILITY; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRIC RESISTANCE; GATES (TRANSISTOR); PARAMETER ESTIMATION; SEMICONDUCTOR DEVICE MODELS; THRESHOLD VOLTAGE;

GATE FIELD MOBILITY REDUCTION FACTOR; PARAMETER EXTRACTION;

MOSFET DEVICES;

EID: 0035696852     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.974720     Document Type: Article

References (8)

1. Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors
2. A capacitance method to determine the channel lengths for conventional and LDD MOSFETs
3. A new method of threshold voltage extraction via MOSFET gate-to-substrate capacitance measurement
4. Mobility degradation due to the gate field in the inversion layer of MOSFETs
5. A new method for measuring the threshold voltage of small-geometry MOSFETs from subthreshold conduction
6. A new method to determine MOSFET channel length
7. An assessment of methods to measure effective channel length of MOSFETs