Modeling gallium arsenide heterojunction bipolar transistor ledge variations for insight into device reliability

Microelectronics Reliability

Volumn 42, Issue 7, 2002, Pages 1011-1020

  Henderson, Tim ^a  

^a TRIQUINT SEMICONDUCTOR   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL DEFECTS; ELECTRONS; LEAKAGE CURRENTS; SEMICONDUCTING GALLIUM ARSENIDE;

ELECTRON-HOLE RECOMBINATION DENSITY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036642258     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(02)00065-3     Document Type: Conference Paper

References (21)

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3. Migration from an AlGaAs to an InGaP emitter HBT IC process for improved reliability
4. Source identification and control of 1/f noise in AlGaAs/GaAs HBTs by using an on-ledge Schottky diode
5. Improved current gain stability in C-doped HBTs with an AlGaAs surface passivation layer
6. High-reliability GaAs-AlGaAs HBTs by MBE with BE base doping and InGaAs emitter contacts
7. Interaction of degradation mechanisms in Be-doped GaAs HBTs
8. Physics of degradation in GaAs-based heterojunction bipolar transistors
9. Reliability of self-aligned, ledge passivated 7.5 GHz GaAs/AlGaAs HBT power amplifiers under RF bias stress at elevated temperatures
10. Determination of reliability on MOCVD grown InGaP/GaAs HBTs under both thermal and current accelerated stresses
11. Characterization of bias-stressed carbon-doped GaAs/AlGaAs power heterojunction bipolar transistors
12. Degradation of III-V opto-electronic devices
13. Recombination-enhanced impurity diffusion in Be-doped GaAs
14. Cathodoluminescence evidence of stress-induced outdiffusion of beryllium in AlGaAs/GaAs heterojunction bipolar transistors
15. Reliability of InGaP/GaAs HBTs under high current acceleration
16. High-performance InGaP/GaAs tunneling emitter bipolar transistors
17. Resolving degradation mechanisms in ultra-high performance n-p-n heterojunction bipolar transistors
18. Photo-luminescence and transmission electron microscope studies of low- and high-reliability AlGaAs/GaAs HBTs
19. Reliable AlGaAs/GaAs HBTs grown by MBE with increased beryllium doping and aluminum concentration
20. Effect of emitter-base spacing on the current gain of AlGaAs/GaAs heterojunction bipolar transistors