Determination of reliability on MOCVD grown InGap/GaAs HBT's under both thermal and current acceleration stresses

GaAs Reliability Workshop, Proceedings

Volumn , Issue , 2001, Pages 159-180

  Feng, Kevin T ^a   Rushing, Lance ^a   Canfield, Phil ^a   Flores, Larry ^a  

^a Conexant Systems Inc ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CURRENT DENSITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL STRESS;

BETA DEGRADATION; CURRENT ACCELERATION STRESSES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035746656     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)