Reliable AlGaAs/GaAs HBTs grown by MBE with increased beryllium doping and aluminum concentration

GaAs Reliability Workshop, Proceedings

Volumn , Issue , 2001, Pages 203-222

  Fresina, Mike ^a   Logue, Mike ^a   Fendrich, John ^a   Rogers, Tom ^a  

^a RF MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; BERYLLIUM; DOPING (ADDITIVES); GAIN MEASUREMENT; MOLECULAR BEAM EPITAXY; POWER AMPLIFIERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS;

HIGH-FREQUENCY GAIN; TEMPARATURE COEFFICIENTS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035746567     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. Reliability performance of components and ICS from a production 1 μm GaAs HBT process
2. Performance and reliability of an advanced production GaAs HBT process technology
3. Measurement of junction temperature of an AlGaAs/GaAs HBT operating at large power densities