Interaction of degradation mechanisms in Be-doped GaAs HBTs

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2000, Pages 241-244

  Hill, D ^a   Parsey, J ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BERYLLIUM; DEGRADATION; DIFFUSION IN SOLIDS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

RECOMBINATION-ENHANCED DEFECT REACTIONS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034441628     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)