Photo-luminescence and transmission electron microscope studies of low- and high-reliability AlGaAs/GaAs HBTs

Solid-State Electronics

Volumn 44, Issue 4, 2000, Pages 739-746

  Mohammadi, S ^a   Hubbard, S M ^a   Chelli, C ^a   Pavlidis, D ^a   Bayraktaroglu, B ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; PHOTOLUMINESCENCE; RELIABILITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM GALLIUM ARSENIDE; MEDIAN TIME TO FAILURE; SELF ALIGNED PROCESS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033888651     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00292-0     Document Type: Article

References (20)

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