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Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2001, Pages 273-276

Reliability of InGaP/GaAs HBT's under high current acceleration

(4) Feng, K T a Runshing, L a Canfield, P a Sun, W a

a Rockwell Semiconductor Systems (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CURRENT DENSITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

CURRENT ACCELERATION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035166051 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (9)

References (8)

1
- 0032050344
- (1998) IEEE Trans. Electron. Devices , vol.19 , Issue.4 , pp. 115
- Pan, N.¹ Elliott, J.² Knowles, M.³ Vu, D.P.⁴ Kishimoto, K.⁵ Twynam, J.K.⁶ Sato, H.⁷ Fresina, M.T.⁸ Stillman, G.E.⁹

2
- 0002382170
- (1995) IEEE GaAs Symposium , pp. 67
- Walters, P.¹ Lau, P.² Buchring, K.³ Penny, J.⁴ Farley, C.⁵ McDade, P.⁶

3
- 0001429848
- (1994) Proc. IDEM , pp. 191
- Takahashi, T.¹ Sasa, S.² Kawano, A.³ Iwai, T.⁴ Fujii, T.⁵

4
- 0002430569
- (1998) IEEE GaAs Symposium , pp. 56
- Low, T.S.¹ Hutchinson, C.P.² Canfield, P.C.³ Shirley, T.S.⁴ Yeats, R.E.⁵ Chang, J.S.C.⁶ Essilfie, G.K.⁷ Culver, M.K.⁸ Whiteley, W.C.⁹ D'Avanzo, D.C.¹⁰ Pan, N.¹¹ Elliot, J.¹² Lutz, C.¹³

5
- 0002763319
- (1996) GaAs Rel. Workshop , pp. 11
- Beaulieu, C.¹ Beggs, B.² Bennett, J.³ Cook, J.P.D.⁴ Hobbs, L.⁵ Lester, T.⁶ Oliver, B.⁷ Surridge, R.K.⁸

6
- 0002300039
- (2000) GaAs MANTECH , pp. 131
- Yeats, B.¹ Chandler, P.² Culver, M.³ D'Avanzo, D.⁴ Essilfie, G.⁵ Hutchinson, C.⁶ Kuhn, D.⁷ Low, T.⁸ Shirley, T.⁹ Thomas, S.¹⁰ Whigeley, W.¹¹

7
- 0002497635
- (1999) IEEE GaAs Symposium , pp. 59
- Yeats, B.¹

8
- 4243589920
- (1995) Proc. IEDM , pp. 811
- Henderson, T.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.