Source identification and control of 1/f noise in AlGaAs/GaAs HBTs by using an on-ledge Schottky diode

IEEE Electron Device Letters

Volumn 21, Issue 11, 2000, Pages 528-530

  Ma, Pingxi ^a   Chang, M F ^a   Zampardi, Peter ^b   Canfield, Philip ^b   Sheu, Jerry ^c   Li, G P ^c  

^a Engineering IV   (United States)

^b Conexant Systems ^*  (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SPECTRUM ANALYSIS; SPURIOUS SIGNAL NOISE; TRANSCEIVERS;

ALUMINUM GALLIUM ARSENIDE; EMITTER LEDGE PASSIVATION; NOISE SPECTRA DENSITY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034318088     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.877200     Document Type: Article

References (4)

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2. H. H. Lin and S. C. Lee, "Super-gain AlGaAs/GaAs heterojunction bipolar transistors using an emitter edge-thinning design," Appl. Phys. Lett., vol. 47, pp. 839-841, 1985.
3. J. R. Waldrop and M. F. Chang, "Negative differential reistance of AlGaAs/GaAs heterojunction bipolar transistors: Influence of emitter edge current," IEEE Electron Device Lett., vol. 16, pp. 8-10, Jan. 1995.
4. P. Ma, P. Zampardi, L. Zhang, and M. F. Chang, "Determining the effectiveness of HBT emitter ledge passivation by using an on-ledge Schottky diode potentiometer," IEEE Electron Device Lett., vol. 20, pp. 460-462, Sept. 1999.