High performance sub-0.2 μm gate length PMOSFETs with source/drain extensions fabricated by plasma doping

Proceedings of the International Conference on Ion Implantation Technology

Volumn 1, Issue , 1999, Pages 114-117

  Yeap, Geoffrey C F ^a   Felch, Susan B ^a   Bang, David ^a   Lee, Brian ^a   Lin, Ming Ren ^a  

^a ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); ION IMPLANTATION; LEAKAGE CURRENTS; PLASMAS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; THRESHOLD VOLTAGE;

PLASMA DOPING; SHALLOW TRENCH ISOLATION (STI);

MOSFET DEVICES;

EID: 0033323030     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)