Implant dosimetry results for plasma doping

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 2000, Pages 492-495

  Walther, Steve ^a   Lenoble, Damien ^b   Fang, Ziwei ^a   Liebert, Reuel B ^a  

^a VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

^b ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT PLASMAS; CAPACITIVE DISPLACEMENT; DOSE MEASUREMENT; HIGH POTENTIAL; PLASMA DOPING; PULSED PLASMA; PULSED PLASMA DOPING; SECONDARY ELECTRONS; WAFER SURFACE;

PLASMA SHEATHS; SEMICONDUCTOR DOPING;

ION IMPLANTATION;

EID: 2142851135     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2000.924195     Document Type: Conference Paper

References (7)

1. Reuel B. Liebert, Steve Walther, Susan Felch, Ziwei Fang, Bjorn Pedersen, and David Hacker, "Plasma Doping System for 300 mm Wafers", these proceedings.
2. U. S. Patent #6020592, Reuel B. Liebert, Bjorn O. Pedersen, and Matthew Goeckner, "Dose Monitor for Plasma Doping System", Feb. 1, 2000.
3. th Int. Conf. Ion Implant. Tech., Kyoto, Japan, June 22-26, 1998.
4. Erin C. Jones and Nathan W. Cheung, "Plasma Doping Dosimetry", IEEE Trans. Plasma Science, Vol. 25, No. 1, p. 42, 1997.
5. Blake P. Wood, "Displacement current and multiple pulse effects in plasma source ion implantation", J. Apl. Phys., Vol. 73, No. 10, p. 4770, 1993.
6. M. M. Shamim, J. T. Scheuer, R. P. Fetherston, and J. R. Conrad, "Measurement of electron emission due to energetic ion bombardment in plasma source ion imlantation", J. Appl. Phys. Vol. 70, No. 9, p. 4796, 1991.
7. D. Lenoble, F. Amaud, A. Grouillet, R. Liebert, S. Walther, S.B. Felch, Z. Fang, M. Haond, "Reliable and enhanced performances of sub-0.1 μm pMOSFETs doped by low biased Plasma Doping", Proceedings of the VLSI 2000 Conference.