Optical characterization of impact ionization in flip-chip-bonded InP-based high electron mobility transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 10, 1999, Pages 5823-5828

  Shigekawa, Naotem ^a   Furuta, Tomofumi ^a   Suemitsu, Tetsuya ^a   Umeda, Yohtaro ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; ELECTRIC POTENTIAL; ELECTROLUMINESCENCE; FLIP CHIP DEVICES; GATES (TRANSISTOR); IMPACT IONIZATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

IMPACT IONIZATION INDUCED HOLES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033312369     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.5823     Document Type: Article

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