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Volumn 49, Issue 7, 2002, Pages 1219-1226
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Series resistance calculation for source/drain extension regions using 2-D device simulation
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Author keywords
Error analysis; Extraction methods; MOS device scaling; Parameter estimation; Resistance; Semiconductor device modeling; Series resistance
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Indexed keywords
DEVICE SCALING;
EXTENSION REGIONS;
EXTRACTION METHODS;
SHIFT AND RATIO METHOD;
COMPUTER SIMULATION;
ELECTRIC CONDUCTIVITY MEASUREMENT;
ELECTRIC CURRENT MEASUREMENT;
ELECTRIC RESISTANCE MEASUREMENT;
ERROR ANALYSIS;
PARAMETER ESTIMATION;
SEMICONDUCTOR DEVICE MODELS;
TWO DIMENSIONAL;
MOS DEVICES;
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EID: 0036637954
PISSN: 00189383
EISSN: None
Source Type: Journal
DOI: 10.1109/TED.2002.1013279 Document Type: Article |
Times cited : (10)
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References (18)
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