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Volumn 49, Issue 7, 2002, Pages 1219-1226

Series resistance calculation for source/drain extension regions using 2-D device simulation

Author keywords

Error analysis; Extraction methods; MOS device scaling; Parameter estimation; Resistance; Semiconductor device modeling; Series resistance

Indexed keywords

DEVICE SCALING; EXTENSION REGIONS; EXTRACTION METHODS; SHIFT AND RATIO METHOD;

EID: 0036637954     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.1013279     Document Type: Article
Times cited : (10)

References (18)
  • 2
    • 0004245602 scopus 로고    scopus 로고
    • International technology roadmap for semiconductors
    • 1999 edition front end processes final draft, Oct.
    • (1999)
  • 6
    • 0004146057 scopus 로고
    • Advanced mobility models for design and simulation of deep submicrometer MOSFETs
    • Ph.D. dissertation, Stanford Univ., Stanford, CA, Dec.
    • (1995)
    • Mujtaba, S.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.