A new "critical-current at linear-threshold" method for direct extraction of deep-submicron MOSFET effective channel length

IEEE Transactions on Electron Devices

Volumn 46, Issue 7, 1999, Pages 1492-1494

  Zhou, X ^a   Lim, K Y ^a   Lim, D ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

Critical current at linear threshold; Deep submicron MOSFET; Effective channel length

Indexed keywords

ALGORITHMS; CRITICAL CURRENTS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC RESISTANCE; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MODELS;

EFFECTIVE CHANNEL LENGTH;

MOSFET DEVICES;

EID: 0032626821     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.772497     Document Type: Article

References (12)

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9. X. Zhou, K. Y. Lim, and D. Lim, "A simple and unambiguous definition of threshold voltage and its implications in deep-submicron MOS device modeling," to appear in IEEE Trans. Electron Devices, vol. 46, pp. 807-809, Apr. 1999.
10. _, "A general approach to compact threshold voltage formulation based on 2-D numerical simulation and experimental correlation for deep-submicron ULSI technology development," submitted for publication.
11. X. Zhou and K. Y. Lim, "Experimental determination of electrical, metallurgical, and physical gate lengths of submicron MOSFET's," submitted for publication.
12. X. Zhou, K. Y. Lim, and D. Lim, "A predictive length-dependent saturation current model based on accurate threshold voltage modeling," to appear in Proc. 2nd Modeling and Simulation of Microsystems, Semiconductors, Sensors and Actuators (MSM99), Puerto Rico, Apr. 1999, pp. 423-426.