Two-dimensional dopant characterization using SIMS, SCS and TSUPREM4

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 349-352

  Ukraintsev, V A ^a   Walsh, S T ^a   Ashburn, S P ^a   Machala, C F ^a   Edwards, Hal ^a   Gray, J T ^a   Joshi, S ^a   Woodall, D ^a   Chang, M C ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; MICROSCOPIC EXAMINATION; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DEVICE MANUFACTURE; SPECTROSCOPY; TWO DIMENSIONAL;

ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION; DOPANT PROFILING; SCANNING CAPACITANCE MICROSCOPY; SCANNING CAPACITANCE SPECTROSCOPY; SOFTWARE PACKAGE TSUPREM4;

SEMICONDUCTOR DOPING;

EID: 0033351002     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)