Limitations of the modified shift-and-ratio technique for extraction of the bias dependence of Leff and Rsd of LDD MOSFET's

IEEE Transactions on Electron Devices

Volumn 47, Issue 4, 2000, Pages 891-893

  Ahmed, Khaled ^a   De Indranil, ^a   Osburn, Carl ^a   Wortman, Jimmie ^a   Hauser, John ^a,b  

^a North Carolina State University   (United States)

^b Conexant Systems Inc ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

EFFECTIVE CHANNEL LENGTH; MODIFIED SHIFT-AND-RATIO TECHNIQUES;

MOSFET DEVICES;

EID: 0033879951     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.831010     Document Type: Article

References (9)

1. National Technology Roadmap for Semiconductors. San Jose, CA: Semiconductor Indust. Assoc. , 1997.
2. K. K. Ng and J. R. Brews, "Measuring the effective channel length of MOSFET's," IEEE Circuits Devices Mag. , vol. 6, p. 33, Nov. 1990.
3. S. Biesemans, S. Kubicek, and K. De Meyer, "Reliable gate-voltage-dependent channel-length and series resistance extraction technique taking into account threshold voltage reduction in MOSFETs," in Proc. ISDR Symp. , 1995, p. 807.
4. S. Biesemans, M. Hendriks, S. Kubicek, and K. De Meyer, "Accurate determination of channel length, series resistance and junction doping profile for MOSFET optimization in deep submicron technologies," in 1996 Symp. on VLSI Technology Dig. Tech. Papers, 1996, p. 166.
5. TMA MEDICI: Two Dimensional Device Simulation Program. Sunnyvale, CA: Technol. Modeling Assoc. .
6. G. M. Yeric and Al F. Tasch, "A universal MOSFET mobility degradation model for circuit simulation," IEEE Trans. Computer-Aided Design, vol. 9, p. 1123, 1990.
7. J. Ida, A. Kita, and F. Ichikawa, "A new extraction method for effective channel length on lightly doped drain MOSFET's," in Proc. IEEE Int. Conf. Microelectronic Test Structures, ICMTS, vol. 3, 1990, p. 117.
8. Y. Taur, T. -J. Mii, R. Logan, and H. -S. Wong, "On 'effective' channel length in 0. l-//m MOSFET's," IEEE Electron Device Lett. , vol. 16, p. 136, Apr. 1995.
9. Y Taur et al, "A new shift and ratio method for MOSFET channellength extraction," IEEE Electron Device Lett. , vol. 13, p. 267, May 1992.