Thermal characterization of LDMOS transistors for accelerating stress testing

Microelectronics Journal

Volumn 31, Issue 9, 2000, Pages 747-752

  Bosc, J M ^a   Dupuy, P ^a   Gil, J ^a   Dorkel, J M ^b   Sarrabayrouse, G ^b  

^a MOTOROLA INC   (United States)

^b LAAS CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; INTEGRATED CIRCUIT LAYOUT; STRESS ANALYSIS; TEMPERATURE MEASUREMENT; THERMODYNAMIC STABILITY;

ACCELERATED STRESS TESTING (AST); MULTI-PULSE TESTING;

MOSFET DEVICES;

EID: 0034300288     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(00)00054-9     Document Type: Article

References (10)

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