Improved 20V lateral trench gate power MOSFETs with very low on-resistance of 7.8 mΩ·mm2

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2000, Pages 47-50

  Nakagawa, A ^a   Kawaguchi, Y ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CONTACTS; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTRONS; POWER ELECTRONICS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE;

BREAKDOWN VOLTAGE; CURRENT TURN OFF CAPABILITY; DEVICE ON RESISTANCE; ELECTRON CURRENT; LATERAL TRENCH GATE POWER;

MOSFET DEVICES;

EID: 0034449948     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)